IXFP36N20X3M
MOSFET N-CH 200V 36A TO220Manufacturer: IXYS
Categories: Single FETs, MOSFETs
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The IXYS IXFP36N20X3M is an N-Channel HiPerFET™, Ultra X3 series power MOSFET designed for high-efficiency switching applications. This component features a 200V drain-source breakdown voltage (Vdss) and a continuous drain current (Id) capability of 36A at 25°C (Tc). With a low on-resistance (Rds On) of 45mOhm at 18A and 10V gate drive, it minimizes conduction losses.
The device exhibits a gate charge (Qg) of 21 nC at 10V and input capacitance (Ciss) of 1425 pF at 25V. The IXFP36N20X3M is housed in a TO-220-3 Full Pack, Isolated Tab package, suitable for through-hole mounting. It has a maximum power dissipation of 36W (Tc) and an operating temperature range of -55°C to 150°C (TJ). This MOSFET is commonly utilized in power supplies, motor control, and industrial automation.
Additional Information
Series: HiPerFET™, Ultra X3RoHS Status: ROHS3 CompliantManufacturer Lead Time: 32 week(s)Product Status: ActivePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-220-3 Full Pack, Isolated Tab |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 36A (Tc) |
| Rds On (Max) @ Id, Vgs | 45mOhm @ 18A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 36W (Tc) |
| Vgs(th) (Max) @ Id | 4.5V @ 500µA |
| Supplier Device Package | TO-220 Isolated Tab |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 200 V |
| Gate Charge (Qg) (Max) @ Vgs | 21 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1425 pF @ 25 V |
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