IXFP34N65X2M
MOSFET N-CH 650V 34A TO220Manufacturer: IXYS
Categories: Single FETs, MOSFETs
Quality Control: Learn More
The IXYS IXFP34N65X2M is a HiPerFET™, Ultra X2 series N-Channel power MOSFET designed for high-voltage applications. This component features a 650V drain-source breakdown voltage and a continuous drain current capability of 34A at 25°C (Tc). With a low on-state resistance of 100mOhm at 17A and 10V, it exhibits efficient conduction characteristics. The device is packaged in a TO-220 Isolated Tab configuration, suitable for through-hole mounting. Key parameters include a gate charge (Qg) of 56 nC at 10V and input capacitance (Ciss) of 3230 pF at 25V. The maximum power dissipation is rated at 40W (Tc). This MOSFET is utilized in power factor correction, switch-mode power supplies, and industrial motor control systems.
Additional Information
Series: HiPerFET™, Ultra X2RoHS Status: ROHS3 CompliantManufacturer Lead Time: 32 week(s)Product Status: ActivePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-220-3 Full Pack, Isolated Tab |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 34A (Tc) |
| Rds On (Max) @ Id, Vgs | 100mOhm @ 17A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 40W (Tc) |
| Vgs(th) (Max) @ Id | 5V @ 1.5mA |
| Supplier Device Package | TO-220 Isolated Tab |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±30V |
| Drain to Source Voltage (Vdss) | 650 V |
| Gate Charge (Qg) (Max) @ Vgs | 56 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 3230 pF @ 25 V |
Request a Quote
Clients Also Buy
IXFY8N65X2
MOSFET N-CH 650V 8A TO252AA
IXFT60N65X2HV
MOSFET N-CH 650V 60A TO268HV
IXFA34N65X2-TRL
MOSFET N-CH 650V 34A TO263
