IXFP270N06T3
MOSFET N-CH 60V 270A TO220ABManufacturer: IXYS
Categories: Single FETs, MOSFETs
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The IXYS IXFP270N06T3 is a HiperFET™, TrenchT3™ N-Channel Power MOSFET designed for high-efficiency power switching applications. This component features a 60V Drain-Source Voltage (Vdss) and a continuous drain current capability of 270A at 25°C (Tc), with a maximum power dissipation of 480W (Tc). The low on-resistance of 3.1mOhm at 100A and 10V drive voltage, coupled with a gate charge of 200 nC at 10V, ensures efficient switching performance. Its TO-220-3 through-hole package is suitable for demanding applications. The IXFP270N06T3 is utilized across various industrial sectors, including power supplies, motor control, and renewable energy systems. This device operates within a temperature range of -55°C to 175°C (TJ).
Additional Information
Series: HiperFET™, TrenchT3™RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-220-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 270A (Tc) |
| Rds On (Max) @ Id, Vgs | 3.1mOhm @ 100A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 480W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | TO-220-3 |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 60 V |
| Gate Charge (Qg) (Max) @ Vgs | 200 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 12600 pF @ 25 V |
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