IXFP24N60X
MOSFET N-CH 600V 24A TO220ABManufacturer: IXYS
Categories: Single FETs, MOSFETs
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The IXYS HiPerFET™, Ultra X series IXFP24N60X is a 600V N-Channel power MOSFET. This through-hole component features a continuous drain current of 24A at 25°C, with a maximum power dissipation of 400W. The Rds(On) is specified at 175mOhm maximum at 12A and 10V Vgs. Key parameters include a gate charge (Qg) of 47 nC maximum at 10V and input capacitance (Ciss) of 1910 pF maximum at 25V. The device is housed in a standard TO-220-3 package and operates across a temperature range of -55°C to 150°C. This component is suitable for applications in power supplies and industrial motor control.
Additional Information
Series: HiPerFET™, Ultra XRoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-220-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 24A (Tc) |
| Rds On (Max) @ Id, Vgs | 175mOhm @ 12A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 400W (Tc) |
| Vgs(th) (Max) @ Id | 4.5V @ 2.5mA |
| Supplier Device Package | TO-220-3 |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±30V |
| Drain to Source Voltage (Vdss) | 600 V |
| Gate Charge (Qg) (Max) @ Vgs | 47 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1910 pF @ 25 V |
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