IXFP20N50P3M
MOSFET N-CH 500V 8A TO220ABManufacturer: IXYS
Categories: Single FETs, MOSFETs
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IXYS HiPerFET™, Polar3™ IXFP20N50P3M is a 500V N-Channel power MOSFET designed for high-efficiency switching applications. This device features a low Rds(on) of 300mOhm at 10A and 10V Vgs, minimizing conduction losses. With a continuous drain current of 8A (Tc) and a maximum power dissipation of 58W (Tc), it is suitable for demanding power conversion tasks. The TO-220-3 package offers robust thermal performance and ease of mounting via through-hole technology. Key parameters include a gate charge of 36 nC at 10V and input capacitance of 1800 pF at 25V. This component is utilized in power supplies, motor control, and industrial automation. The operating temperature range is -55°C to 150°C (TJ).
Additional Information
Series: HiPerFET™, Polar3™RoHS Status: ROHS3 CompliantManufacturer Lead Time: 44 week(s)Product Status: ActivePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-220-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 8A (Tc) |
| Rds On (Max) @ Id, Vgs | 300mOhm @ 10A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 58W (Tc) |
| Vgs(th) (Max) @ Id | 5V @ 1.5mA |
| Supplier Device Package | TO-220-3 |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±30V |
| Drain to Source Voltage (Vdss) | 500 V |
| Gate Charge (Qg) (Max) @ Vgs | 36 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1800 pF @ 25 V |
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