IXFP16N50P3
MOSFET N-CH 500V 16A TO220ABManufacturer: IXYS
Categories: Single FETs, MOSFETs
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The IXYS IXFP16N50P3 is a HiPerFET™, Polar3™ series N-Channel Power MOSFET designed for demanding applications. This through-hole component features a high Drain-Source Voltage (Vdss) of 500 V and a continuous Drain Current (Id) of 16A at 25°C. With a maximum power dissipation of 330W at 25°C, it is suitable for power conversion, industrial motor control, and high-voltage power supplies. The device offers a low on-resistance (Rds On) of 360mOhm at 8A and 10V, with a typical gate charge (Qg) of 29 nC at 10V. The TO-220-3 package ensures robust thermal performance. Operating temperature range is from -55°C to 150°C.
Additional Information
Series: HiPerFET™, Polar3™RoHS Status: ROHS3 CompliantManufacturer Lead Time: 44 week(s)Product Status: ActivePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-220-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 16A (Tc) |
| Rds On (Max) @ Id, Vgs | 360mOhm @ 8A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 330W (Tc) |
| Vgs(th) (Max) @ Id | 5V @ 2.5mA |
| Supplier Device Package | TO-220-3 |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±30V |
| Drain to Source Voltage (Vdss) | 500 V |
| Gate Charge (Qg) (Max) @ Vgs | 29 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1515 pF @ 25 V |
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