IXFP14N60P3
MOSFET N-CH 600V 14A TO220ABManufacturer: IXYS
Categories: Single FETs, MOSFETs
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The IXYS IXFP14N60P3 is a HiPerFET™, Polar3™ series N-Channel MOSFET designed for high-efficiency power switching applications. This component features a Drain-to-Source Voltage (Vdss) of 600 V and a continuous Drain current (Id) of 14 A at 25°C (Tc). Its low on-resistance, specified at 540 mOhm maximum at 7 A and 10 V gate drive, contributes to reduced conduction losses. The device offers a maximum power dissipation of 327 W at 25°C (Tc) and a low gate charge (Qg) of 25 nC at 10 V. With an input capacitance (Ciss) of 1480 pF at 25 V, it is suitable for demanding switching frequencies. The IXFP14N60P3 is packaged in a TO-220-3 through-hole configuration, operating across a temperature range of -55°C to 150°C (TJ). This component is widely utilized in power supply units, industrial motor control, and lighting applications.
Additional Information
Series: HiPerFET™, Polar3™RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-220-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 14A (Tc) |
| Rds On (Max) @ Id, Vgs | 540mOhm @ 7A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 327W (Tc) |
| Vgs(th) (Max) @ Id | 5V @ 1mA |
| Supplier Device Package | TO-220-3 |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±30V |
| Drain to Source Voltage (Vdss) | 600 V |
| Gate Charge (Qg) (Max) @ Vgs | 25 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1480 pF @ 25 V |
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