IXFP130N15X3
MOSFET N-CH 150V 130A TO220ABManufacturer: IXYS
Categories: Single FETs, MOSFETs
Quality Control: Learn More
IXYS IXFP130N15X3 is an N-Channel HiPerFET™, Ultra X3 series power MOSFET. This component features a 150V drain-to-source breakdown voltage (Vdss) and a continuous drain current (Id) of 130A at 25°C (Tc). The device exhibits a low on-resistance (Rds On) of 9mOhm maximum at 65A and 10V gate-source voltage. With a maximum power dissipation of 390W (Tc), the IXFP130N15X3 is suitable for high-power switching applications. Key parameters include a gate charge (Qg) of 80 nC maximum at 10V and input capacitance (Ciss) of 5230 pF maximum at 25V. The MOSFET is housed in a TO-220-3 package, designed for through-hole mounting, and operates within a temperature range of -55°C to 150°C (TJ). This component is commonly utilized in power supply, motor control, and industrial automation applications.
Additional Information
Series: HiPerFET™, Ultra X3RoHS Status: ROHS3 CompliantManufacturer Lead Time: 32 week(s)Product Status: ActivePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-220-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 130A (Tc) |
| Rds On (Max) @ Id, Vgs | 9mOhm @ 65A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 390W (Tc) |
| Vgs(th) (Max) @ Id | 4.5V @ 1.5mA |
| Supplier Device Package | TO-220-3 |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 150 V |
| Gate Charge (Qg) (Max) @ Vgs | 80 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 5230 pF @ 25 V |
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