IXFP12N50PM
MOSFET N-CH 500V 6A TO220ABManufacturer: IXYS
Categories: Single FETs, MOSFETs
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The IXYS IXFP12N50PM is a HiPerFET™, Polar series N-Channel Power MOSFET designed for high voltage applications. This component features a drain-source voltage (Vdss) of 500 V and a continuous drain current (Id) of 6 A at 25°C (Tc). With a maximum on-resistance (Rds On) of 500 mOhm at 6 A and 10 V, it offers efficient switching. The device has a gate charge (Qg) of 29 nC at 10 V and an input capacitance (Ciss) of 1830 pF at 25 V. It is housed in a TO-220-3 package with through-hole mounting and a maximum power dissipation of 50 W (Tc). The operating temperature range is -55°C to 150°C (TJ). This MOSFET is suitable for use in power supply and motor control applications across various industrial sectors.
Additional Information
Series: HiPerFET™, PolarRoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-220-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 6A (Tc) |
| Rds On (Max) @ Id, Vgs | 500mOhm @ 6A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 50W (Tc) |
| Vgs(th) (Max) @ Id | 5.5V @ 1mA |
| Supplier Device Package | TO-220-3 |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±30V |
| Drain to Source Voltage (Vdss) | 500 V |
| Gate Charge (Qg) (Max) @ Vgs | 29 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1830 pF @ 25 V |
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