IXFP12N50P
MOSFET N-CH 500V 12A TO220ABManufacturer: IXYS
Categories: Single FETs, MOSFETs
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The IXYS HiPerFET™, Polar series IXFP12N50P is an N-Channel Power MOSFET designed for high-voltage applications. This component features a Drain-to-Source Voltage (Vdss) of 500V and a continuous Drain Current (Id) of 12A at 25°C, with a maximum power dissipation of 200W. The Rds On is specified at a maximum of 500mOhm at 6A and 10V gate drive. Key parameters include a Gate Charge (Qg) of 29 nC and Input Capacitance (Ciss) of 1830 pF, both specified at 10V and 25V respectively. The device operates within a temperature range of -55°C to 150°C and is housed in a TO-220-3 package for through-hole mounting. This MOSFET is suitable for applications in power supplies, power factor correction, and motor control.
Additional Information
Series: HiPerFET™, PolarRoHS Status: ROHS3 CompliantManufacturer Lead Time: 44 week(s)Product Status: ActivePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-220-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 12A (Tc) |
| Rds On (Max) @ Id, Vgs | 500mOhm @ 6A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 200W (Tc) |
| Vgs(th) (Max) @ Id | 5.5V @ 1mA |
| Supplier Device Package | TO-220-3 |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±30V |
| Drain to Source Voltage (Vdss) | 500 V |
| Gate Charge (Qg) (Max) @ Vgs | 29 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1830 pF @ 25 V |
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