IXFP110N15T2
MOSFET N-CH 150V 110A TO220ABManufacturer: IXYS
Categories: Single FETs, MOSFETs
Quality Control: Learn More
The IXYS IXFP110N15T2 is an N-Channel Power MOSFET from the HiPerFET™, TrenchT2™ series. This component features a 150V drain-to-source voltage (Vdss) and a continuous drain current (Id) of 110A at 25°C. With a low on-resistance of 13mOhm at 55A and 10V, this MOSFET offers efficient power handling with a maximum power dissipation of 480W. The IXFP110N15T2 is housed in a TO-220-3 package for through-hole mounting and operates across a wide junction temperature range of -55°C to 175°C. Key parameters include a gate charge (Qg) of 150 nC at 10V and input capacitance (Ciss) of 8600 pF at 25V. This device is suitable for applications in power switching, motor control, and power supplies.
Additional Information
Series: HiPerFET™, TrenchT2™RoHS Status: ROHS3 CompliantManufacturer Lead Time: 27 week(s)Product Status: ActivePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-220-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 110A (Tc) |
| Rds On (Max) @ Id, Vgs | 13mOhm @ 55A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 480W (Tc) |
| Vgs(th) (Max) @ Id | 4.5V @ 250µA |
| Supplier Device Package | TO-220-3 |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 150 V |
| Gate Charge (Qg) (Max) @ Vgs | 150 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 8600 pF @ 25 V |
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