IXFN90N170SK
SICFET N-CH 1700V 90A SOT227BManufacturer: IXYS
Categories: Single FETs, MOSFETs
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The IXYS IXFN90N170SK is an N-Channel SiCFET designed for high-voltage applications. This component features a drain-source voltage (Vdss) of 1700 V and a continuous drain current (Id) of 90 A at 25°C (Tc). The low on-resistance (Rds On) of 35 mOhm at 100 A and 20 V gate drive voltage, coupled with a gate charge (Qg) of 376 nC at 20 V, facilitates efficient switching. Input capacitance (Ciss) is 7340 pF at 1000 V. The device operates within a temperature range of -40°C to 150°C (TJ). It is housed in a SOT-227B (miniBLOC) package suitable for chassis mounting. This SiC MOSFET is utilized in industries such as industrial power supplies, electric vehicle charging, and renewable energy systems.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | SOT-227-4, miniBLOC |
| Mounting Type | Chassis Mount |
| Operating Temperature | -40°C ~ 150°C (TJ) |
| Technology | SiCFET (Silicon Carbide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 90A (Tc) |
| Rds On (Max) @ Id, Vgs | 35mOhm @ 100A, 20V |
| FET Feature | - |
| Power Dissipation (Max) | - |
| Vgs(th) (Max) @ Id | 4V @ 36mA |
| Supplier Device Package | SOT-227B |
| Drive Voltage (Max Rds On, Min Rds On) | 20V |
| Vgs (Max) | +20V, -5V |
| Drain to Source Voltage (Vdss) | 1700 V |
| Gate Charge (Qg) (Max) @ Vgs | 376 nC @ 20 V |
| Input Capacitance (Ciss) (Max) @ Vds | 7340 pF @ 1000 V |
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