IXFN80N50Q3
MOSFET N-CH 500V 63A SOT227BManufacturer: IXYS
Categories: Single FETs, MOSFETs
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The IXYS IXFN80N50Q3 is a HiPerFET™, Q3 Class N-Channel Power MOSFET with a 500V drain-source voltage. It offers a continuous drain current of 63A at 25°C (Tc) and a maximum power dissipation of 780W (Tc). The device features a low on-resistance of 65mOhm at 40A and 10V Vgs. Key parameters include a gate charge (Qg) of 200 nC (max) at 10V and input capacitance (Ciss) of 10000 pF (max) at 25V. The IXFN80N50Q3 is housed in a SOT-227B package, designed for chassis mounting, and operates within a temperature range of -55°C to 150°C (TJ). This component is suitable for applications in power supply, motor control, and induction heating.
Additional Information
Series: HiPerFET™, Q3 ClassRoHS Status: ROHS3 CompliantManufacturer Lead Time: 44 week(s)Product Status: ActivePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | SOT-227-4, miniBLOC |
| Mounting Type | Chassis Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 63A (Tc) |
| Rds On (Max) @ Id, Vgs | 65mOhm @ 40A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 780W (Tc) |
| Vgs(th) (Max) @ Id | 6.5V @ 8mA |
| Supplier Device Package | SOT-227B |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±30V |
| Drain to Source Voltage (Vdss) | 500 V |
| Gate Charge (Qg) (Max) @ Vgs | 200 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 10000 pF @ 25 V |
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