IXFN80N48
MOSFET N-CH 480V 80A SOT-227BManufacturer: IXYS
Categories: Single FETs, MOSFETs
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IXYS HiPerFET™ IXFN80N48 is an N-Channel power MOSFET designed for high-power applications. This component features a drain-source voltage (Vdss) of 480V and a continuous drain current (Id) capability of 80A at 25°C (Tc). The device exhibits a low on-resistance (Rds On) of 45mOhm maximum at 500mA and 10V, contributing to efficient power handling with a maximum power dissipation of 700W (Tc). The IXFN80N48 utilizes a robust SOT-227B (miniBLOC) package for chassis mounting, facilitating effective thermal management. Key parameters include a gate charge (Qg) of 380 nC at 10V and input capacitance (Ciss) of 9890 pF at 25V. Its operating temperature range is -55°C to 150°C (TJ). This MOSFET is suitable for demanding applications in power supplies, motor control, and industrial automation.
Additional Information
Series: HiPerFET™RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | SOT-227-4, miniBLOC |
| Mounting Type | Chassis Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 80A (Tc) |
| Rds On (Max) @ Id, Vgs | 45mOhm @ 500mA, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 700W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 8mA |
| Supplier Device Package | SOT-227B |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 480 V |
| Gate Charge (Qg) (Max) @ Vgs | 380 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 9890 pF @ 25 V |
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