IXFN75N120SK
SIC AND MULTICHIP DISCRETEManufacturer: IXYS
Categories: Single FETs, MOSFETs
Quality Control: Learn More
The IXYS IXFN75N120SK is a high-performance N-Channel Silicon Carbide (SiC) MOSFET designed for demanding power applications. This device features a robust 1200 V drain-source voltage rating and a continuous drain current capability of 75 A at 25°C (Tc). Its low on-resistance of 27 mOhm at 50 A and 15 V gate-source voltage, combined with a gate charge of 158 nC at 15 V, ensures efficient switching performance. The IXFN75N120SK is housed in a SOT-227B (miniBLOC) package, facilitating chassis mounting and effective thermal management. With an operating temperature range of -40°C to 150°C, this SiC MOSFET is suitable for use in applications such as electric vehicle charging, industrial motor drives, and renewable energy systems. It supports a gate drive voltage of up to 15 V.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 86 week(s)Product Status: ActivePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | SOT-227-4, miniBLOC |
| Mounting Type | Chassis Mount |
| Operating Temperature | -40°C ~ 150°C (TJ) |
| Technology | SiC (Silicon Carbide Junction Transistor) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 75A (Tc) |
| Rds On (Max) @ Id, Vgs | 27mOhm @ 50A, 15V |
| FET Feature | - |
| Power Dissipation (Max) | - |
| Vgs(th) (Max) @ Id | 3.6V @ 18mA |
| Supplier Device Package | SOT-227B |
| Grade | - |
| Drive Voltage (Max Rds On, Min Rds On) | 15V |
| Vgs (Max) | +15V, -4V |
| Drain to Source Voltage (Vdss) | 1200 V |
| Gate Charge (Qg) (Max) @ Vgs | 158 nC @ 15 V |
| Input Capacitance (Ciss) (Max) @ Vds | 4820 pF @ 1000 V |
| Qualification | - |
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