IXFN74N100X
MOSFET N-CH 1000V 74A SOT227BManufacturer: IXYS
Categories: Single FETs, MOSFETs
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The IXYS IXFN74N100X is an N-Channel HiPerFET™, Ultra X series MOSFET designed for high-voltage applications. Featuring a drain-source voltage (Vdss) of 1000 V and a continuous drain current (Id) of 74 A at 25°C (Tc), this component offers a low on-resistance (Rds On) of 66 mOhm at 37 A and 10 V gate drive. Its substantial power dissipation capability of 1170 W (Tc) makes it suitable for demanding power conversion and switching tasks. The device utilizes advanced MOSFET technology and is housed in a SOT-227B (miniBLOC) package, facilitating chassis mounting. Key parameters include a gate charge (Qg) of 425 nC at 10 V and input capacitance (Ciss) of 17000 pF at 25 V. Operating temperature range is -55°C to 150°C (TJ). This component finds application in industries such as industrial power supplies, renewable energy systems, and electric vehicle charging.
Additional Information
Series: HiPerFET™, Ultra XRoHS Status: ROHS3 CompliantManufacturer Lead Time: 32 week(s)Product Status: ActivePackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | SOT-227-4, miniBLOC |
| Mounting Type | Chassis Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 74A (Tc) |
| Rds On (Max) @ Id, Vgs | 66mOhm @ 37A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 1170W (Tc) |
| Vgs(th) (Max) @ Id | 5.5V @ 8mA |
| Supplier Device Package | SOT-227B |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±30V |
| Drain to Source Voltage (Vdss) | 1000 V |
| Gate Charge (Qg) (Max) @ Vgs | 425 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 17000 pF @ 25 V |
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