IXFN73N30Q
MOSFET N-CH 300V 73A SOT-227BManufacturer: IXYS
Categories: Single FETs, MOSFETs
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The IXYS IXFN73N30Q is an N-Channel HiPerFET™, Q Class power MOSFET featuring a 300V drain-source voltage and a continuous drain current of 73A at 25°C (Tc). This component offers a low on-resistance of 45mOhm maximum at 500mA and 10V. With a maximum power dissipation of 481W (Tc) and a gate charge of 195nC at 10V, it is designed for high-efficiency switching applications. The IXFN73N30Q utilizes MOSFET technology and is housed in a SOT-227B package, facilitating chassis mounting. Its robust construction and electrical characteristics make it suitable for demanding applications in power supplies, motor control, and industrial automation. The operating temperature range is -55°C to 150°C (TJ).
Additional Information
Series: HiPerFET™, Q ClassRoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | SOT-227-4, miniBLOC |
| Mounting Type | Chassis Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 73A (Tc) |
| Rds On (Max) @ Id, Vgs | 45mOhm @ 500mA, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 481W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 4mA |
| Supplier Device Package | SOT-227B |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±30V |
| Drain to Source Voltage (Vdss) | 300 V |
| Gate Charge (Qg) (Max) @ Vgs | 195 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 5400 pF @ 25 V |
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