IXFN73N30
MOSFET N-CH 300V 73A SOT-227BManufacturer: IXYS
Categories: Single FETs, MOSFETs
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The IXYS IXFN73N30 is a HiPerFET™ N-Channel Power MOSFET designed for high-efficiency applications. This component features a 300V drain-to-source voltage (Vdss) and a continuous drain current of 73A at 25°C (Tc). With a maximum on-resistance (Rds On) of 45mOhm at 500mA and 10V, it offers low conduction losses. The device supports a gate drive voltage of 10V and has a maximum gate-source voltage of ±20V. Key parameters include a gate charge (Qg) of 360nC at 10V and input capacitance (Ciss) of 9000pF at 25V. It is packaged in a SOT-227B (miniBLOC) chassis mount configuration, facilitating robust thermal management with a maximum power dissipation of 500W (Tc). Operating temperature ranges from -55°C to 150°C (TJ). This MOSFET is suitable for use in power switching, power factor correction, and switch-mode power supply applications across various industrial sectors.
Additional Information
Series: HiPerFET™RoHS Status: ROHS3 CompliantManufacturer Lead Time: 43 week(s)Product Status: Not For New DesignsPackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | SOT-227-4, miniBLOC |
| Mounting Type | Chassis Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 73A (Tc) |
| Rds On (Max) @ Id, Vgs | 45mOhm @ 500mA, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 500W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 8mA |
| Supplier Device Package | SOT-227B |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 300 V |
| Gate Charge (Qg) (Max) @ Vgs | 360 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 9000 pF @ 25 V |
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