IXFN72N55Q2
MOSFET N-CH 550V 72A SOT-227BManufacturer: IXYS
Categories: Single FETs, MOSFETs
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IXYS HiPerFET™, Q2 Class N-Channel Power MOSFET, part number IXFN72N55Q2. This SOT-227B package component features a 550 V drain-source voltage and a continuous drain current of 72 A at 25°C (Tc), with a maximum power dissipation of 890 W (Tc). The device exhibits a low on-resistance of 72 mOhm maximum at 500 mA and 10 V Vgs. Key parameters include a gate charge of 258 nC at 10 V and input capacitance of 10500 pF at 25 V. Designed for chassis mounting, it operates within a temperature range of -55°C to 150°C. This MOSFET is suited for high-power switching applications in industries such as industrial power supplies, motor control, and renewable energy systems.
Additional Information
Series: HiPerFET™, Q2 ClassRoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | SOT-227-4, miniBLOC |
| Mounting Type | Chassis Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 72A (Tc) |
| Rds On (Max) @ Id, Vgs | 72mOhm @ 500mA, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 890W (Tc) |
| Vgs(th) (Max) @ Id | 5V @ 8mA |
| Supplier Device Package | SOT-227B |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±30V |
| Drain to Source Voltage (Vdss) | 550 V |
| Gate Charge (Qg) (Max) @ Vgs | 258 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 10500 pF @ 25 V |
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