IXFN70N60Q2
MOSFET N-CH 600V 70A SOT-227BManufacturer: IXYS
Categories: Single FETs, MOSFETs
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IXYS HiPerFET™, Q2 Class N-Channel Power MOSFET, part number IXFN70N60Q2. This device features a 600V drain-source voltage rating and a continuous drain current capability of 70A at 25°C (Tc). With a low on-resistance of 80mOhm maximum at 35A and 10V gate drive, it offers efficient power switching. The IXFN70N60Q2 boasts a maximum power dissipation of 890W (Tc) and is housed in a SOT-227B package for robust chassis mounting. Key parameters include a 265 nC maximum gate charge and 7200 pF maximum input capacitance. This MOSFET is suitable for high-power applications in industries such as industrial power supplies, electric vehicle charging, and renewable energy systems. Operating temperature range is -55°C to 150°C (TJ).
Additional Information
Series: HiPerFET™, Q2 ClassRoHS Status: ROHS3 CompliantManufacturer Lead Time: 43 week(s)Product Status: Not For New DesignsPackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | SOT-227-4, miniBLOC |
| Mounting Type | Chassis Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 70A (Tc) |
| Rds On (Max) @ Id, Vgs | 80mOhm @ 35A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 890W (Tc) |
| Vgs(th) (Max) @ Id | 5V @ 8mA |
| Supplier Device Package | SOT-227B |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±30V |
| Drain to Source Voltage (Vdss) | 600 V |
| Gate Charge (Qg) (Max) @ Vgs | 265 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 7200 pF @ 25 V |
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