IXFN70N120SK
SICFET N-CH 1200V 68A SOT227BManufacturer: IXYS
Categories: Single FETs, MOSFETs
Quality Control: Learn More
The IXYS IXFN70N120SK is an N-Channel SiCFET designed for high-voltage, high-current applications. This component features a drain-source voltage (Vdss) of 1200 V and a continuous drain current (Id) of 68 A at 25°C (Tc). With a low on-resistance (Rds On) of 34 mOhm at 50 A and 20 V, it offers efficient power switching. The gate charge (Qg) is a maximum of 161 nC at 20 V, and input capacitance (Ciss) is 2790 pF at 1000 V. The device operates with a drive voltage of up to 20 V and has gate-source voltage limits of +20 V and -5 V. Mounting is facilitated by its SOT-227B (miniBLOC) chassis mount package. This SiCFET is suitable for use in power supplies, motor drives, and renewable energy systems, operating across a temperature range of -40°C to 175°C (TJ).
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 86 week(s)Product Status: ActivePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | SOT-227-4, miniBLOC |
| Mounting Type | Chassis Mount |
| Operating Temperature | -40°C ~ 175°C (TJ) |
| Technology | SiCFET (Silicon Carbide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 68A (Tc) |
| Rds On (Max) @ Id, Vgs | 34mOhm @ 50A, 20V |
| FET Feature | - |
| Power Dissipation (Max) | - |
| Vgs(th) (Max) @ Id | 4V @ 15mA |
| Supplier Device Package | SOT-227B |
| Drive Voltage (Max Rds On, Min Rds On) | 20V |
| Vgs (Max) | +20V, -5V |
| Drain to Source Voltage (Vdss) | 1200 V |
| Gate Charge (Qg) (Max) @ Vgs | 161 nC @ 20 V |
| Input Capacitance (Ciss) (Max) @ Vds | 2790 pF @ 1000 V |
Request a Quote
Clients Also Buy
IXFK90N20Q
MOSFET N-CH 200V 90A TO264AA
IXFH20N60
MOSFET N-CH 600V 20A TO-247AD
IXTH20N50D
MOSFET N-CH 500V 20A TO247
