IXFN64N50PD3
MOSFET N-CH 500V 50A SOT227BManufacturer: IXYS
Categories: Single FETs, MOSFETs
Quality Control: Learn More
The IXYS IXFN64N50PD3 is a high-performance N-Channel Power MOSFET from the PolarHV™ series, designed for demanding applications. This device features a drain-source voltage (Vdss) of 500V and a continuous drain current (Id) of 50A at 25°C (Tc), with a maximum power dissipation of 625W (Tc). Its low on-resistance (Rds On) is specified at 85mOhm at 32A and 10V, facilitated by a gate-source voltage (Vgs) drive up to 10V. The MOSFET exhibits a gate charge (Qg) of 186 nC at 10V and input capacitance (Ciss) of 11000 pF at 25V. Mounted in a SOT-227B (miniBLOC) package for efficient thermal management, this component operates across a temperature range of -55°C to 150°C (TJ). The IXFN64N50PD3 is suitable for power conversion, industrial motor control, and high-voltage switching applications.
Additional Information
Series: PolarHV™RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | SOT-227-4, miniBLOC |
| Mounting Type | Chassis Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 50A (Tc) |
| Rds On (Max) @ Id, Vgs | 85mOhm @ 32A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 625W (Tc) |
| Vgs(th) (Max) @ Id | 5V @ 8mA |
| Supplier Device Package | SOT-227B |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±30V |
| Drain to Source Voltage (Vdss) | 500 V |
| Gate Charge (Qg) (Max) @ Vgs | 186 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 11000 pF @ 25 V |
Request a Quote
Clients Also Buy
IXGH28N60B3D1
IGBT 600V 66A 190W TO247AD
IXTY1R6N50P
MOSFET N-CH 500V 1.6A TO252
IXTY2R4N50P
MOSFET N-CH 500V 2.4A TO252
