IXFN64N50PD2
MOSFET N-CH 500V 52A SOT-227BManufacturer: IXYS
Categories: Single FETs, MOSFETs
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The IXYS IXFN64N50PD2 is an N-Channel Power MOSFET from the PolarHV™ series. This component offers a 500 V drain-source voltage (Vdss) and a continuous drain current (Id) of 52A at 25°C, with a maximum power dissipation of 625W (Tc). Featuring a low on-resistance of 85mOhm at 32A and 10V gate-source voltage, this device utilizes a SOT-227B package for chassis mounting, facilitating efficient thermal management in demanding applications. Key electrical characteristics include a gate charge (Qg) of 186 nC at 10 V and an input capacitance (Ciss) of 11000 pF at 25 V. It operates across a temperature range of -55°C to 150°C (TJ) and is suitable for high-voltage power conversion and switching applications across industrial and automotive sectors.
Additional Information
Series: PolarHV™RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | SOT-227-4, miniBLOC |
| Mounting Type | Chassis Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 52A (Tc) |
| Rds On (Max) @ Id, Vgs | 85mOhm @ 32A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 625W (Tc) |
| Vgs(th) (Max) @ Id | 5V @ 8mA |
| Supplier Device Package | SOT-227B |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±30V |
| Drain to Source Voltage (Vdss) | 500 V |
| Gate Charge (Qg) (Max) @ Vgs | 186 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 11000 pF @ 25 V |
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