IXFN62N80Q3
MOSFET N-CH 800V 49A SOT227BManufacturer: IXYS
Categories: Single FETs, MOSFETs
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The IXYS IXFN62N80Q3 is an N-Channel Power MOSFET from the HiPerFET™, Q3 Class series. This component features a Drain-to-Source Voltage (Vdss) of 800 V and a continuous drain current (Id) of 49A at 25°C (Tc), with a maximum power dissipation of 960W (Tc). The device offers a low on-resistance (Rds On) of 140mOhms maximum at 31A and 10V drive voltage. Key parameters include a gate charge (Qg) of 270 nC maximum at 10V and input capacitance (Ciss) of 13600 pF maximum at 25V. The IXFN62N80Q3 is housed in a SOT-227B (miniBLOC) package, designed for chassis mounting, and operates across a temperature range of -55°C to 150°C (TJ). This device is suitable for applications in power supply, industrial motor control, and high-voltage switching systems.
Additional Information
Series: HiPerFET™, Q3 ClassRoHS Status: ROHS3 CompliantManufacturer Lead Time: 46 week(s)Product Status: ActivePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | SOT-227-4, miniBLOC |
| Mounting Type | Chassis Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 49A (Tc) |
| Rds On (Max) @ Id, Vgs | 140mOhm @ 31A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 960W (Tc) |
| Vgs(th) (Max) @ Id | 6.5V @ 8mA |
| Supplier Device Package | SOT-227B |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±30V |
| Drain to Source Voltage (Vdss) | 800 V |
| Gate Charge (Qg) (Max) @ Vgs | 270 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 13600 pF @ 25 V |
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