IXFN50N80Q2
MOSFET N-CH 800V 50A SOT-227BManufacturer: IXYS
Categories: Single FETs, MOSFETs
Quality Control: Learn More
The IXYS IXFN50N80Q2 is an N-Channel HiPerFET™ Q2 Class Power MOSFET designed for high-voltage applications. This device features a maximum drain-source voltage (Vdss) of 800V and a continuous drain current (Id) of 50A at 25°C (Tc). With a low on-resistance (Rds On) of 160mOhm at 500mA and 10V, it offers efficient power handling with a maximum power dissipation of 1135W (Tc). The gate charge (Qg) is 260 nC at 10V, and input capacitance (Ciss) is 13500 pF at 25V. Operating across a temperature range of -55°C to 150°C (TJ), the IXFN50N80Q2 is housed in a SOT-227B package for chassis mounting. This component is suitable for use in power supplies, motor drives, and various industrial applications requiring robust high-voltage switching.
Additional Information
Series: HiPerFET™, Q2 ClassRoHS Status: ROHS3 CompliantManufacturer Lead Time: 98 week(s)Product Status: Not For New DesignsPackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | SOT-227-4, miniBLOC |
| Mounting Type | Chassis Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 50A (Tc) |
| Rds On (Max) @ Id, Vgs | 160mOhm @ 500mA, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 1135W (Tc) |
| Vgs(th) (Max) @ Id | 5.5V @ 8mA |
| Supplier Device Package | SOT-227B |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±30V |
| Drain to Source Voltage (Vdss) | 800 V |
| Gate Charge (Qg) (Max) @ Vgs | 260 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 13500 pF @ 25 V |
Request a Quote
Clients Also Buy
IXFH14N100Q2
MOSFET N-CH 1000V 14A TO247AD
IXFR14N100Q2
MOSFET N-CH 1000V 9.5A ISOPLS247
IXFB80N50Q2
MOSFET N-CH 500V 80A PLUS264
