IXFN50N50
MOSFET N-CH 500V 50A SOT-227BManufacturer: IXYS
Categories: Single FETs, MOSFETs
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The IXYS IXFN50N50 from the HiPerFET™ series is a 500V N-Channel Power MOSFET designed for high-power applications. This component features a continuous drain current capability of 50A at 25°C case temperature and a maximum power dissipation of 600W at 25°C case temperature. The low on-resistance is specified at 90mOhm maximum for a drain current of 500mA and a gate-source voltage of 10V. Key parameters include a drain-to-source voltage (Vdss) of 500V, a gate charge (Qg) of 330 nC maximum at 10V Vgs, and input capacitance (Ciss) of 9400 pF maximum at 25V Vds. The device utilizes MOSFET Metal Oxide technology and has a maximum gate-source voltage (Vgs) of ±20V. It is supplied in a SOT-227B (miniBLOC) package suitable for chassis mounting and operates within a temperature range of -55°C to 150°C. This high-performance MOSFET is commonly employed in power supply, motor drive, and industrial automation applications.
Additional Information
Series: HiPerFET™RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | SOT-227-4, miniBLOC |
| Mounting Type | Chassis Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 50A (Tc) |
| Rds On (Max) @ Id, Vgs | 90mOhm @ 500mA, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 600W (Tc) |
| Vgs(th) (Max) @ Id | 4.5V @ 8mA |
| Supplier Device Package | SOT-227B |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 500 V |
| Gate Charge (Qg) (Max) @ Vgs | 330 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 9400 pF @ 25 V |
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