IXFN50N120SK
SICFET N-CH 1200V 48A SOT227BManufacturer: IXYS
Categories: Single FETs, MOSFETs
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The IXYS IXFN55N120SK is an N-Channel SiCFET designed for high-voltage, high-current applications. Featuring a Drain-to-Source Voltage (Vdss) of 1200 V and a continuous drain current (Id) of 48A at 25°C (Tc), this component offers a low on-resistance (Rds On) of 52mOhm at 40A and 20V. The N-Channel SiCFET technology utilizes Silicon Carbide for enhanced performance characteristics. Key parameters include a gate charge (Qg) of 115 nC at 20V and input capacitance (Ciss) of 1895 pF at 1000V. The device supports a gate-source voltage (Vgs) range of +20V to -5V and has a threshold voltage (Vgs(th)) of 2.8V at 10mA. Mounted in a SOT-227B (miniBLOC) package suitable for chassis mounting, it operates within a temperature range of -40°C to 175°C (TJ). This component finds application in power factor correction, electric vehicle charging, and industrial power supplies.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 88 week(s)Product Status: ActivePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | SOT-227-4, miniBLOC |
| Mounting Type | Chassis Mount |
| Operating Temperature | -40°C ~ 175°C (TJ) |
| Technology | SiCFET (Silicon Carbide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 48A (Tc) |
| Rds On (Max) @ Id, Vgs | 52mOhm @ 40A, 20V |
| FET Feature | - |
| Power Dissipation (Max) | - |
| Vgs(th) (Max) @ Id | 2.8V @ 10mA |
| Supplier Device Package | SOT-227B |
| Drive Voltage (Max Rds On, Min Rds On) | 20V |
| Vgs (Max) | +20V, -5V |
| Drain to Source Voltage (Vdss) | 1200 V |
| Gate Charge (Qg) (Max) @ Vgs | 115 nC @ 20 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1895 pF @ 1000 V |
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