IXFN50N120SIC
SICFET N-CH 1200V 47A SOT227BManufacturer: IXYS
Categories: Single FETs, MOSFETs
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IXYS SiCFET N-Channel power MOSFET, part number IXFN50N120SIC, offers a 1200V drain-to-source voltage capability with a continuous drain current of 47A at 25°C (Tc). This device features a low on-resistance of 50mOhm at 40A and 20V gate-source voltage, enabled by its Silicon Carbide (SiC) technology. The IXFN50N120SIC is housed in a SOT-227B (miniBLOC) package, designed for chassis mounting. Key parameters include a gate charge of 100 nC at 20V and input capacitance of 1900 pF at 1000V. The operating temperature range is -40°C to 150°C (TJ). This component is suitable for high-voltage, high-efficiency applications in power supplies, motor drives, and industrial power systems.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 88 week(s)Product Status: ActivePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | SOT-227-4, miniBLOC |
| Mounting Type | Chassis Mount |
| Operating Temperature | -40°C ~ 150°C (TJ) |
| Technology | SiCFET (Silicon Carbide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 47A (Tc) |
| Rds On (Max) @ Id, Vgs | 50mOhm @ 40A, 20V |
| FET Feature | - |
| Power Dissipation (Max) | - |
| Vgs(th) (Max) @ Id | 2.4V @ 10mA |
| Supplier Device Package | SOT-227B |
| Drive Voltage (Max Rds On, Min Rds On) | 20V |
| Vgs (Max) | +20V, -5V |
| Drain to Source Voltage (Vdss) | 1200 V |
| Gate Charge (Qg) (Max) @ Vgs | 100 nC @ 20 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1900 pF @ 1000 V |
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