IXFN48N60P
MOSFET N-CH 600V 40A SOT227BManufacturer: IXYS
Categories: Single FETs, MOSFETs
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IXYS IXFN48N60P is a 600V N-Channel Power MOSFET from the HiPerFET™, Polar series. This component offers 40A continuous drain current at 25°C (Tc) and a maximum power dissipation of 625W (Tc). Key electrical specifications include a Vds of 600V, Rds On (Max) of 140mOhm at 4A, 10V, and a gate charge (Qg) of 150 nC at 10V. Input capacitance (Ciss) is 8860 pF at 25V. The device is housed in a SOT-227B (miniBLOC) package, designed for chassis mounting. Operating temperature ranges from -55°C to 150°C (TJ). This MOSFET is suitable for high-power switching applications found in industrial power supplies, motor control, and renewable energy systems.
Additional Information
Series: HiPerFET™, PolarRoHS Status: ROHS3 CompliantManufacturer Lead Time: 46 week(s)Product Status: ActivePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | SOT-227-4, miniBLOC |
| Mounting Type | Chassis Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 40A (Tc) |
| Rds On (Max) @ Id, Vgs | 140mOhm @ 4A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 625W (Tc) |
| Vgs(th) (Max) @ Id | 5.5V @ 8mA |
| Supplier Device Package | SOT-227B |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±30V |
| Drain to Source Voltage (Vdss) | 600 V |
| Gate Charge (Qg) (Max) @ Vgs | 150 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 8860 pF @ 25 V |
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