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IXFN48N55

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IXFN48N55

MOSFET N-CH 550V 48A SOT-227B

Manufacturer: IXYS

Categories: Single FETs, MOSFETs

Quality Control: Learn More

IXYS HiPerFET™ IXFN48N55 is a high-performance N-Channel MOSFET designed for demanding power applications. This component features a maximum drain-source voltage (Vdss) of 550V and a continuous drain current (Id) of 48A at 25°C (Tc), with a maximum power dissipation of 600W (Tc). The device offers a low on-resistance (Rds On) of 110mOhm at 500mA and 10V Vgs, and a gate charge (Qg) of 330 nC at 10V. Input capacitance (Ciss) is rated at 8900 pF at 25V. The IXFN48N55 is housed in a SOT-227B (miniBLOC) package suitable for chassis mounting. Operating temperature range is -55°C to 150°C (TJ). This MOSFET is utilized in industries such as power supplies, motor control, and industrial automation.

Additional Information

Series: HiPerFET™RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tube
Technical Details:
PackagingTube
Package / CaseSOT-227-4, miniBLOC
Mounting TypeChassis Mount
Operating Temperature-55°C ~ 150°C (TJ)
TechnologyMOSFET (Metal Oxide)
FET TypeN-Channel
Current - Continuous Drain (Id) @ 25°C48A (Tc)
Rds On (Max) @ Id, Vgs110mOhm @ 500mA, 10V
FET Feature-
Power Dissipation (Max)600W (Tc)
Vgs(th) (Max) @ Id4.5V @ 8mA
Supplier Device PackageSOT-227B
Drive Voltage (Max Rds On, Min Rds On)10V
Vgs (Max)±20V
Drain to Source Voltage (Vdss)550 V
Gate Charge (Qg) (Max) @ Vgs330 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds8900 pF @ 25 V

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