IXFN48N50U2
MOSFET N-CH 500V 48A SOT-227BManufacturer: IXYS
Categories: Single FETs, MOSFETs
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IXYS HiPerFET™ N-Channel Power MOSFET, part number IXFN48N50U2, offers a 500V drain-source voltage with a continuous drain current rating of 48A at 25°C (Tc). This device features a maximum continuous drain current of 48A and a maximum power dissipation of 520W (Tc). Key parameters include a low on-resistance of 100mOhm maximum at 500mA and 10V, and a gate charge of 270nC at 10V. Input capacitance (Ciss) is 8400pF maximum at 25V. The IXFN48N50U2 utilizes SOT-227B packaging for chassis mounting, operating within a temperature range of -40°C to 150°C (TJ). This component is suitable for applications in power supplies, industrial motor control, and renewable energy systems.
Additional Information
Series: HiPerFET™RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | SOT-227-4, miniBLOC |
| Mounting Type | Chassis Mount |
| Operating Temperature | -40°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 48A (Tc) |
| Rds On (Max) @ Id, Vgs | 100mOhm @ 500mA, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 520W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 8mA |
| Supplier Device Package | SOT-227B |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 500 V |
| Gate Charge (Qg) (Max) @ Vgs | 270 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 8400 pF @ 25 V |
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