IXFN48N50
MOSFET N-CH 500V 48A SOT-227BManufacturer: IXYS
Categories: Single FETs, MOSFETs
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The IXYS IXFN48N50 is a HiPerFET™ N-Channel Power MOSFET designed for high-efficiency power switching applications. This component features a maximum drain-source voltage (Vdss) of 500 V and a continuous drain current (Id) of 48 A at 25°C (Tc), with a maximum power dissipation of 520 W (Tc). The device offers a low on-resistance (Rds On) of 100 mOhm at 500 mA and 10 V, and a gate charge (Qg) of 270 nC at 10 V. It is housed in a SOT-227B (miniBLOC) package designed for chassis mounting, facilitating robust thermal management. The operating temperature range is -55°C to 150°C (TJ). This MOSFET is suitable for use in industrial power supplies, motor control, and welding equipment.
Additional Information
Series: HiPerFET™RoHS Status: ROHS3 CompliantManufacturer Lead Time: 43 week(s)Product Status: Not For New DesignsPackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | SOT-227-4, miniBLOC |
| Mounting Type | Chassis Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 48A (Tc) |
| Rds On (Max) @ Id, Vgs | 100mOhm @ 500mA, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 520W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 8mA |
| Supplier Device Package | SOT-227B |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 500 V |
| Gate Charge (Qg) (Max) @ Vgs | 270 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 8400 pF @ 25 V |
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