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IXFN44N80

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IXFN44N80

MOSFET N-CH 800V 44A SOT-227B

Manufacturer: IXYS

Categories: Single FETs, MOSFETs

Quality Control: Learn More

The IXYS HiPerFET™ IXFN44N80 is an N-channel power MOSFET designed for high-voltage applications. Featuring a Drain-to-Source Voltage (Vdss) of 800 V and a continuous drain current (Id) of 44 A at 25°C (Tc), this component offers a maximum power dissipation of 700 W (Tc). The device exhibits a typical Rds On of 165 mOhm at 500 mA and 10 V Vgs. Key parameters include a gate charge (Qg) of 380 nC at 10 V and input capacitance (Ciss) of 10000 pF at 25 V. The IXFN44N80 utilizes MOSFET technology and is supplied in a SOT-227B (miniBLOC) package suitable for chassis mounting. It operates within a temperature range of -55°C to 150°C (TJ) and has a maximum gate-source voltage (Vgs) of ±20V. This component finds application in industries such as renewable energy, industrial power supplies, and motor control.

Additional Information

Series: HiPerFET™RoHS Status: ROHS3 CompliantManufacturer Lead Time: 98 week(s)Product Status: Not For New DesignsPackaging: TubeDatasheet:
Technical Details:
PackagingTube
Package / CaseSOT-227-4, miniBLOC
Mounting TypeChassis Mount
Operating Temperature-55°C ~ 150°C (TJ)
TechnologyMOSFET (Metal Oxide)
FET TypeN-Channel
Current - Continuous Drain (Id) @ 25°C44A (Tc)
Rds On (Max) @ Id, Vgs165mOhm @ 500mA, 10V
FET Feature-
Power Dissipation (Max)700W (Tc)
Vgs(th) (Max) @ Id4.5V @ 8mA
Supplier Device PackageSOT-227B
Drive Voltage (Max Rds On, Min Rds On)10V
Vgs (Max)±20V
Drain to Source Voltage (Vdss)800 V
Gate Charge (Qg) (Max) @ Vgs380 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds10000 pF @ 25 V

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