IXFN44N80
MOSFET N-CH 800V 44A SOT-227BManufacturer: IXYS
Categories: Single FETs, MOSFETs
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The IXYS HiPerFET™ IXFN44N80 is an N-channel power MOSFET designed for high-voltage applications. Featuring a Drain-to-Source Voltage (Vdss) of 800 V and a continuous drain current (Id) of 44 A at 25°C (Tc), this component offers a maximum power dissipation of 700 W (Tc). The device exhibits a typical Rds On of 165 mOhm at 500 mA and 10 V Vgs. Key parameters include a gate charge (Qg) of 380 nC at 10 V and input capacitance (Ciss) of 10000 pF at 25 V. The IXFN44N80 utilizes MOSFET technology and is supplied in a SOT-227B (miniBLOC) package suitable for chassis mounting. It operates within a temperature range of -55°C to 150°C (TJ) and has a maximum gate-source voltage (Vgs) of ±20V. This component finds application in industries such as renewable energy, industrial power supplies, and motor control.
Additional Information
Series: HiPerFET™RoHS Status: ROHS3 CompliantManufacturer Lead Time: 98 week(s)Product Status: Not For New DesignsPackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | SOT-227-4, miniBLOC |
| Mounting Type | Chassis Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 44A (Tc) |
| Rds On (Max) @ Id, Vgs | 165mOhm @ 500mA, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 700W (Tc) |
| Vgs(th) (Max) @ Id | 4.5V @ 8mA |
| Supplier Device Package | SOT-227B |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 800 V |
| Gate Charge (Qg) (Max) @ Vgs | 380 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 10000 pF @ 25 V |