IXFN44N50U3
MOSFET N-CH 500V 44A SOT-227BManufacturer: IXYS
Categories: Single FETs, MOSFETs
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IXYS HiPerFET™ N-Channel MOSFET, part number IXFN44N50U3, offers a 500V drain-source breakdown voltage and a continuous drain current of 44A at 25°C (Tc). This high-power device, rated at 520W (Tc), features a low on-resistance of 120mOhm maximum at 500mA and 10V gate drive. The SOT-227B package with chassis mount capability ensures efficient thermal management. Key parameters include a gate charge of 270nC at 10V and input capacitance of 8400pF at 25V. Designed for high-efficiency switching applications, it finds use in power supplies, motor control, and industrial power conversion systems. Operating temperature range is -40°C to 150°C (TJ).
Additional Information
Series: HiPerFET™RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | SOT-227-4, miniBLOC |
| Mounting Type | Chassis Mount |
| Operating Temperature | -40°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 44A (Tc) |
| Rds On (Max) @ Id, Vgs | 120mOhm @ 500mA, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 520W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 8mA |
| Supplier Device Package | SOT-227B |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 500 V |
| Gate Charge (Qg) (Max) @ Vgs | 270 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 8400 pF @ 25 V |
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