IXFN44N50Q
MOSFET N-CH 500V 44A SOT-227BManufacturer: IXYS
Categories: Single FETs, MOSFETs
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IXYS HiPerFET™, Q Class IXFN44N50Q is a 500V N-Channel MOSFET featuring a continuous drain current of 44A (Tc) at 25°C and a maximum power dissipation of 500W (Tc). This device is housed in a SOT-227B (miniBLOC) package for chassis mounting. Key parameters include a low on-resistance of 120mOhm at 500mA and 10V, an input capacitance (Ciss) of 7000pF at 25V, and a gate charge (Qg) of 190nC at 10V. The IXFN44N50Q is suitable for high-power applications across industries such as industrial power supplies, motor control, and renewable energy systems. It operates within a temperature range of -55°C to 150°C (TJ) with a maximum gate-source voltage of ±20V.
Additional Information
Series: HiPerFET™, Q ClassRoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | SOT-227-4, miniBLOC |
| Mounting Type | Chassis Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 44A (Tc) |
| Rds On (Max) @ Id, Vgs | 120mOhm @ 500mA, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 500W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 4mA |
| Supplier Device Package | SOT-227B |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 500 V |
| Gate Charge (Qg) (Max) @ Vgs | 190 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 7000 pF @ 25 V |
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