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IXFN44N50

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IXFN44N50

MOSFET N-CH 500V 44A SOT-227B

Manufacturer: IXYS

Categories: Single FETs, MOSFETs

Quality Control: Learn More

The IXYS HiPerFET™ IXFN44N50 is a high-performance N-Channel Power MOSFET designed for demanding applications. This component features a Drain-to-Source Voltage (Vdss) of 500V and a continuous Drain Current (Id) of 44A at 25°C (Tc). With a low Rds On of 120mOhm at 500mA and 10V, coupled with a maximum power dissipation of 520W (Tc), it ensures efficient operation. The device boasts a gate charge (Qg) of 270 nC at 10V and input capacitance (Ciss) of 8400 pF at 25V. Packaged in a SOT-227B (miniBLOC) with a chassis mount configuration, the IXFN44N50 is suitable for high-power switching applications found in industrial power supplies, motor control, and renewable energy systems. The operating temperature range is -55°C to 150°C (TJ), and it supports a gate-source voltage (Vgs) up to ±20V.

Additional Information

Series: HiPerFET™RoHS Status: ROHS3 CompliantManufacturer Lead Time: 43 week(s)Product Status: Not For New DesignsPackaging: TubeDatasheet:
Technical Details:
PackagingTube
Package / CaseSOT-227-4, miniBLOC
Mounting TypeChassis Mount
Operating Temperature-55°C ~ 150°C (TJ)
TechnologyMOSFET (Metal Oxide)
FET TypeN-Channel
Current - Continuous Drain (Id) @ 25°C44A (Tc)
Rds On (Max) @ Id, Vgs120mOhm @ 500mA, 10V
FET Feature-
Power Dissipation (Max)520W (Tc)
Vgs(th) (Max) @ Id4V @ 8mA
Supplier Device PackageSOT-227B
Drive Voltage (Max Rds On, Min Rds On)10V
Vgs (Max)±20V
Drain to Source Voltage (Vdss)500 V
Gate Charge (Qg) (Max) @ Vgs270 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds8400 pF @ 25 V

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