IXFN44N100P
MOSFET N-CH 1000V 37A SOT-227BManufacturer: IXYS
Categories: Single FETs, MOSFETs
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The IXYS IXFN44N100P is an N-channel HiPerFET™ Polar MOSFET designed for high-voltage applications. This device features a maximum drain-source voltage (Vdss) of 1000V and a continuous drain current (Id) of 37A at 25°C (Tc). With a low on-resistance (Rds On) of 220mOhm at 22A and 10V Vgs, it offers efficient power handling with a maximum power dissipation of 890W (Tc). The IXFN44N100P utilizes a SOT-227B package for chassis mounting, facilitating effective thermal management. Key parameters include a gate charge (Qg) of 305 nC at 10V and input capacitance (Ciss) of 19000 pF at 25V. This component is suitable for use in power supply, industrial motor control, and high-voltage switching applications. It operates within a temperature range of -55°C to 150°C (TJ) and has a maximum gate-source voltage (Vgs) of ±30V.
Additional Information
Series: HiPerFET™, PolarRoHS Status: ROHS3 CompliantManufacturer Lead Time: 55 week(s)Product Status: ActivePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | SOT-227-4, miniBLOC |
| Mounting Type | Chassis Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 37A (Tc) |
| Rds On (Max) @ Id, Vgs | 220mOhm @ 22A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 890W (Tc) |
| Vgs(th) (Max) @ Id | 6.5V @ 1mA |
| Supplier Device Package | SOT-227B |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±30V |
| Drain to Source Voltage (Vdss) | 1000 V |
| Gate Charge (Qg) (Max) @ Vgs | 305 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 19000 pF @ 25 V |
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