IXFN39N90
MOSFET N-CH 900V 39A SOT-227BManufacturer: IXYS
Categories: Single FETs, MOSFETs
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The IXYS IXFN39N90 is a HiPerFET™ N-Channel Power MOSFET designed for high-voltage applications. This component features a maximum drain-source voltage (Vdss) of 900 V and a continuous drain current (Id) of 39 A at 25°C. With a maximum power dissipation of 694 W (Tc), it is suitable for demanding thermal environments. The low on-resistance (Rds On) of 220 mOhm at 500 mA and 10 V simplifies design by minimizing conduction losses. Key parameters include a gate charge (Qg) of 390 nC at 10 V and input capacitance (Ciss) of 9200 pF at 25 V. This MOSFET utilizes Metal Oxide technology and is housed in a SOT-227B package, designed for chassis mounting. It operates across a temperature range of -55°C to 150°C (TJ). This device is frequently employed in power supply units, industrial motor control, and renewable energy systems.
Additional Information
Series: HiPerFET™RoHS Status: ROHS3 CompliantManufacturer Lead Time: 52 week(s)Product Status: Not For New DesignsPackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | SOT-227-4, miniBLOC |
| Mounting Type | Chassis Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 39A (Tc) |
| Rds On (Max) @ Id, Vgs | 220mOhm @ 500mA, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 694W (Tc) |
| Vgs(th) (Max) @ Id | 5V @ 8mA |
| Supplier Device Package | SOT-227B |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 900 V |
| Gate Charge (Qg) (Max) @ Vgs | 390 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 9200 pF @ 25 V |
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