IXFN38N100Q2
MOSFET N-CH 1000V 38A SOT-227Manufacturer: IXYS
Categories: Single FETs, MOSFETs
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The IXYS IXFN38N100Q2 is an N-Channel HiPerFET™, Q2 Class power MOSFET designed for high-voltage applications. This component features a maximum drain-source voltage (Vdss) of 1000 V and a continuous drain current (Id) of 38 A at 25°C (Tc). With a low on-resistance (Rds On) of 250 mOhm at 19 A and 10 V gate-source voltage, it minimizes conduction losses. The device boasts significant power handling capability with a maximum power dissipation of 890 W (Tc). Key parameters include a gate charge (Qg) of 250 nC at 10 V and input capacitance (Ciss) of 7200 pF at 25 V. The IXFN38N100Q2 is housed in a SOT-227B (miniBLOC) package, suitable for chassis mounting, and operates across a temperature range of -55°C to 150°C. This MOSFET is commonly utilized in power conversion systems, industrial motor drives, and high-voltage power supplies.
Additional Information
Series: HiPerFET™, Q2 ClassRoHS Status: ROHS3 CompliantManufacturer Lead Time: 43 week(s)Product Status: Not For New DesignsPackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | SOT-227-4, miniBLOC |
| Mounting Type | Chassis Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 38A (Tc) |
| Rds On (Max) @ Id, Vgs | 250mOhm @ 19A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 890W (Tc) |
| Vgs(th) (Max) @ Id | 5V @ 8mA |
| Supplier Device Package | SOT-227B |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±30V |
| Drain to Source Voltage (Vdss) | 1000 V |
| Gate Charge (Qg) (Max) @ Vgs | 250 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 7200 pF @ 25 V |