IXFN36N60
MOSFET N-CH 600V 36A SOT-227BManufacturer: IXYS
Categories: Single FETs, MOSFETs
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IXYS HiPerFET™ IXFN36N60 is an N-Channel power MOSFET with a 600V drain-source voltage and a continuous drain current of 36A at 25°C (Tc). This component features a low on-resistance of 180mOhm maximum at 500mA and 10V Vgs, facilitating efficient power handling with a maximum power dissipation of 520W (Tc). The IXFN36N60 utilizes a SOT-227B (miniBLOC) package suitable for chassis mounting, ensuring robust thermal management. Key parameters include a gate charge of 325nC at 10V and input capacitance of 9000pF at 25V. This device operates within a temperature range of -55°C to 150°C (TJ). Applications for this MOSFET include power supplies, motor control, and industrial power systems.
Additional Information
Series: HiPerFET™RoHS Status: ROHS3 CompliantManufacturer Lead Time: 43 week(s)Product Status: Not For New DesignsPackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | SOT-227-4, miniBLOC |
| Mounting Type | Chassis Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 36A (Tc) |
| Rds On (Max) @ Id, Vgs | 180mOhm @ 500mA, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 520W (Tc) |
| Vgs(th) (Max) @ Id | 4.5V @ 8mA |
| Supplier Device Package | SOT-227B |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 600 V |
| Gate Charge (Qg) (Max) @ Vgs | 325 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 9000 pF @ 25 V |
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