IXFN36N110P
MOSFET N-CH 1100V 36A SOT-227BManufacturer: IXYS
Categories: Single FETs, MOSFETs
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The IXYS IXFN36N110P is an N-Channel HiPerFET™ Power MOSFET designed for high-voltage applications. This component features a maximum drain-source voltage (Vdss) of 1100 V and a continuous drain current (Id) of 36 A at 25°C (Tc). With a maximum power dissipation of 1000 W (Tc), it is suitable for demanding power conversion tasks. The device offers a low on-resistance (Rds On) of 240 mOhm at 500 mA and 10 V gate-source voltage. Key parameters include a gate charge (Qg) of 350 nC at 10 V and an input capacitance (Ciss) of 23000 pF at 25 V. The IXFN36N110P utilizes a chassis mount SOT-227B (miniBLOC) package, facilitating efficient thermal management. Its operating temperature range is from -55°C to 150°C (TJ). This component is commonly employed in industrial power supplies, motor control, and high-voltage switching applications.
Additional Information
Series: HiPerFET™, PolarRoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | SOT-227-4, miniBLOC |
| Mounting Type | Chassis Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 36A (Tc) |
| Rds On (Max) @ Id, Vgs | 240mOhm @ 500mA, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 1000W (Tc) |
| Vgs(th) (Max) @ Id | 6.5V @ 1mA |
| Supplier Device Package | SOT-227B |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±30V |
| Drain to Source Voltage (Vdss) | 1100 V |
| Gate Charge (Qg) (Max) @ Vgs | 350 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 23000 pF @ 25 V |
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