IXFN34N80
MOSFET N-CH 800V 34A SOT-227BManufacturer: IXYS
Categories: Single FETs, MOSFETs
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The IXYS IXFN34N80 is an N-Channel HiPerFET™ MOSFET designed for high voltage applications. This component features a Drain to Source Voltage (Vdss) of 800 V and a continuous drain current (Id) of 34A at 25°C (Tc). With a maximum power dissipation of 600W (Tc), it is suitable for demanding power conversion and control circuits. The IXFN34N80 offers a low on-resistance of 240mOhm at 500mA and 10V, contributing to improved efficiency. Key parameters include a gate charge (Qg) of 270 nC @ 10 V and input capacitance (Ciss) of 7500 pF @ 25 V. The SOT-227B package with chassis mount capability ensures robust thermal management. This MOSFET is utilized in industries such as industrial power supplies, motor control, and renewable energy systems. Operating temperature ranges from -55°C to 150°C (TJ), with a maximum gate-source voltage (Vgs) of ±20V.
Additional Information
Series: HiPerFET™RoHS Status: ROHS3 CompliantManufacturer Lead Time: 26 week(s)Product Status: Not For New DesignsPackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | SOT-227-4, miniBLOC |
| Mounting Type | Chassis Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 34A (Tc) |
| Rds On (Max) @ Id, Vgs | 240mOhm @ 500mA, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 600W (Tc) |
| Vgs(th) (Max) @ Id | 5V @ 8mA |
| Supplier Device Package | SOT-227B |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 800 V |
| Gate Charge (Qg) (Max) @ Vgs | 270 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 7500 pF @ 25 V |
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