IXFN32N60
MOSFET N-CH 600V 32A SOT227BManufacturer: IXYS
Categories: Single FETs, MOSFETs
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The IXYS HiPerFET™ IXFN32N60 is a 600V N-Channel Power MOSFET designed for high-efficiency power conversion applications. This device features a continuous drain current capability of 32A at 25°C (Tc) and a maximum power dissipation of 520AW (Tc), making it suitable for demanding power switching tasks. Key electrical specifications include a low Rds On of 250mOhm at 500mA and 10V, an input capacitance (Ciss) of 9000pF at 25V, and a gate charge (Qg) of 325nC at 10V. The MOSFET operates with a drive voltage of 10V and has a maximum Vgs rating of ±20V. Packaged in a SOT-227B (miniBLOC) chassis mount configuration, this component is utilized in industrial power supplies, motor control, and welding equipment. It operates within an extended temperature range of -55°C to 150°C (TJ).
Additional Information
Series: HiPerFET™RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | SOT-227-4, miniBLOC |
| Mounting Type | Chassis Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 32A (Tc) |
| Rds On (Max) @ Id, Vgs | 250mOhm @ 500mA, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 520AW (Tc) |
| Vgs(th) (Max) @ Id | 4.5V @ 8mA |
| Supplier Device Package | SOT-227B |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 600 V |
| Gate Charge (Qg) (Max) @ Vgs | 325 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 9000 pF @ 25 V |
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