IXFN32N120P
MOSFET N-CH 1200V 32A SOT-227BManufacturer: IXYS
Categories: Single FETs, MOSFETs
Quality Control: Learn More
The IXYS IXFN32N120P is an N-Channel HiPerFET™ Polar MOSFET in a SOT-227B package, designed for high-voltage applications. This component features a maximum drain-source voltage (Vdss) of 1200 V and a continuous drain current (Id) of 32 A at 25°C (Tc), with a maximum power dissipation of 1000 W (Tc). The low on-resistance of 310 mOhm at 500 mA and 10 V (Vgs) facilitates efficient power handling. Key parameters include a gate charge (Qg) of 360 nC at 10 V and an input capacitance (Ciss) of 21000 pF at 25 V. The device operates across a temperature range of -55°C to 150°C (TJ) and supports a gate-source voltage (Vgs) up to ±30V. Mounting is via chassis mount. This MOSFET is utilized in industries requiring robust high-voltage switching capabilities.
Additional Information
Series: HiPerFET™, PolarRoHS Status: ROHS3 CompliantManufacturer Lead Time: 57 week(s)Product Status: ActivePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | SOT-227-4, miniBLOC |
| Mounting Type | Chassis Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 32A (Tc) |
| Rds On (Max) @ Id, Vgs | 310mOhm @ 500mA, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 1000W (Tc) |
| Vgs(th) (Max) @ Id | 6.5V @ 1mA |
| Supplier Device Package | SOT-227B |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±30V |
| Drain to Source Voltage (Vdss) | 1200 V |
| Gate Charge (Qg) (Max) @ Vgs | 360 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 21000 pF @ 25 V |
Request a Quote
Clients Also Buy
IXFP6N120P
MOSFET N-CH 1200V 6A TO220AB
IXFP12N50P
MOSFET N-CH 500V 12A TO220AB
IXFA12N50P
MOSFET N-CH 500V 12A TO263
