IXFN32N120
MOSFET N-CH 1200V 32A SOT-227BManufacturer: IXYS
Categories: Single FETs, MOSFETs
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The IXYS IXFN32N120 is a HiPerFET™ series N-Channel Power MOSFET designed for high-voltage applications. This component features a maximum drain-source voltage (Vdss) of 1200 V and a continuous drain current (Id) of 32 A at 25°C. With a typical Rds(On) of 350 mOhm at 500 mA and 10 V, it offers efficient power switching. The device has a gate charge (Qg) of 400 nC at 10 V and an input capacitance (Ciss) of 15900 pF at 25 V. The IXFN32N120 utilizes MOSFET technology and is housed in a SOT-227B package, also known as miniBLOC, facilitating chassis mounting. This component is widely employed in industrial power supplies, motor control, and renewable energy systems.
Additional Information
Series: HiPerFET™RoHS Status: ROHS3 CompliantManufacturer Lead Time: 52 week(s)Product Status: Not For New DesignsPackaging: BoxDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Box |
| Package / Case | SOT-227-4, miniBLOC |
| Mounting Type | Chassis Mount |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 32A |
| Rds On (Max) @ Id, Vgs | 350mOhm @ 500mA, 10V |
| FET Feature | - |
| Vgs(th) (Max) @ Id | 5V @ 8mA |
| Supplier Device Package | SOT-227B |
| Drain to Source Voltage (Vdss) | 1200 V |
| Gate Charge (Qg) (Max) @ Vgs | 400 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 15900 pF @ 25 V |
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