IXFN32N100Q3
MOSFET N-CH 1000V 28A SOT227BManufacturer: IXYS
Categories: Single FETs, MOSFETs
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The IXYS IXFN32N100Q3 is an N-Channel HiPerFET™ Q3 Class MOSFET designed for high voltage applications. This component features a Drain-to-Source Voltage (Vdss) of 1000V and a continuous drain current (Id) of 28A at 25°C (Tc), with a maximum power dissipation of 780W (Tc). The Rds On (Max) is specified at 320mOhm at 16A and 10V gate drive. Key parameters include an input capacitance (Ciss) of 9940pF at 25V and a gate charge (Qg) of 195nC at 10V. The device is housed in a SOT-227B package, suitable for chassis mounting, and operates within a temperature range of -55°C to 150°C. This MOSFET is utilized in industries such as power supply, industrial motor control, and renewable energy systems.
Additional Information
Series: HiPerFET™, Q3 ClassRoHS Status: ROHS3 CompliantManufacturer Lead Time: 46 week(s)Product Status: ActivePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | SOT-227-4, miniBLOC |
| Mounting Type | Chassis Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 28A (Tc) |
| Rds On (Max) @ Id, Vgs | 320mOhm @ 16A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 780W (Tc) |
| Vgs(th) (Max) @ Id | 6.5V @ 8mA |
| Supplier Device Package | SOT-227B |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±30V |
| Drain to Source Voltage (Vdss) | 1000 V |
| Gate Charge (Qg) (Max) @ Vgs | 195 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 9940 pF @ 25 V |
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