IXFN280N085
MOSFET N-CH 85V 280A SOT-227BManufacturer: IXYS
Categories: Single FETs, MOSFETs
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The IXYS IXFN280N085 is an N-Channel HiPerFET™ power MOSFET designed for high-current applications. This component features a drain-to-source voltage (Vdss) of 85V and a continuous drain current (Id) of 280A at 25°C (Tc). With a maximum power dissipation of 700W (Tc), it is suitable for demanding power conversion and control systems. The low on-resistance (Rds On) of 4.4mOhm at 100A and 10V drive voltage minimizes conduction losses. Key parameters include a gate charge (Qg) of 580 nC and input capacitance (Ciss) of 19000 pF at 25V. The SOT-227B (miniBLOC) package facilitates chassis mounting for efficient thermal management. This device is utilized in industries such as industrial power supplies, motor control, and electric vehicle charging.
Additional Information
Series: HiPerFET™RoHS Status: ROHS3 CompliantManufacturer Lead Time: 43 week(s)Product Status: Not For New DesignsPackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | SOT-227-4, miniBLOC |
| Mounting Type | Chassis Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 280A (Tc) |
| Rds On (Max) @ Id, Vgs | 4.4mOhm @ 100A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 700W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 8mA |
| Supplier Device Package | SOT-227B |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 85 V |
| Gate Charge (Qg) (Max) @ Vgs | 580 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 19000 pF @ 25 V |
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