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IXFN280N085

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IXFN280N085

MOSFET N-CH 85V 280A SOT-227B

Manufacturer: IXYS

Categories: Single FETs, MOSFETs

Quality Control: Learn More

The IXYS IXFN280N085 is an N-Channel HiPerFET™ power MOSFET designed for high-current applications. This component features a drain-to-source voltage (Vdss) of 85V and a continuous drain current (Id) of 280A at 25°C (Tc). With a maximum power dissipation of 700W (Tc), it is suitable for demanding power conversion and control systems. The low on-resistance (Rds On) of 4.4mOhm at 100A and 10V drive voltage minimizes conduction losses. Key parameters include a gate charge (Qg) of 580 nC and input capacitance (Ciss) of 19000 pF at 25V. The SOT-227B (miniBLOC) package facilitates chassis mounting for efficient thermal management. This device is utilized in industries such as industrial power supplies, motor control, and electric vehicle charging.

Additional Information

Series: HiPerFET™RoHS Status: ROHS3 CompliantManufacturer Lead Time: 43 week(s)Product Status: Not For New DesignsPackaging: TubeDatasheet:
Technical Details:
PackagingTube
Package / CaseSOT-227-4, miniBLOC
Mounting TypeChassis Mount
Operating Temperature-55°C ~ 150°C (TJ)
TechnologyMOSFET (Metal Oxide)
FET TypeN-Channel
Current - Continuous Drain (Id) @ 25°C280A (Tc)
Rds On (Max) @ Id, Vgs4.4mOhm @ 100A, 10V
FET Feature-
Power Dissipation (Max)700W (Tc)
Vgs(th) (Max) @ Id4V @ 8mA
Supplier Device PackageSOT-227B
Drive Voltage (Max Rds On, Min Rds On)10V
Vgs (Max)±20V
Drain to Source Voltage (Vdss)85 V
Gate Charge (Qg) (Max) @ Vgs580 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds19000 pF @ 25 V

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