IXFN280N07
MOSFET N-CH 70V 280A SOT-227BManufacturer: IXYS
Categories: Single FETs, MOSFETs
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The IXYS HiPerFET™ IXFN280N07 is a high-performance N-Channel Power MOSFET designed for demanding applications. This device features a 70V drain-source breakdown voltage (Vdss) and can handle a continuous drain current (Id) of 280A at 25°C (Tc), with a maximum power dissipation of 600W (Tc). The low on-resistance (Rds On) of 5mOhm is achieved at 120A and 10V gate-source voltage. Key parameters include a gate charge (Qg) of 420nC at 10V and input capacitance (Ciss) of 9400pF at 25V. It operates within a temperature range of -55°C to 150°C (TJ) and utilizes a SOT-227B (miniBLOC) package for chassis mounting. This component is suitable for applications in power conversion, motor control, and industrial power systems.
Additional Information
Series: HiPerFET™RoHS Status: ROHS3 CompliantManufacturer Lead Time: 26 week(s)Product Status: Not For New DesignsPackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | SOT-227-4, miniBLOC |
| Mounting Type | Chassis Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 280A (Tc) |
| Rds On (Max) @ Id, Vgs | 5mOhm @ 120A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 600W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 8mA |
| Supplier Device Package | SOT-227B |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 70 V |
| Gate Charge (Qg) (Max) @ Vgs | 420 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 9400 pF @ 25 V |
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