IXFN27N80
MOSFET N-CH 800V 27A SOT-227BManufacturer: IXYS
Categories: Single FETs, MOSFETs
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The IXYS IXFN27N80 is an N-Channel HiPerFET™ Power MOSFET designed for high-voltage applications. This device features a Drain to Source Voltage (Vdss) of 800V and a continuous drain current (Id) of 27A at 25°C (Tc), with a maximum power dissipation of 520W (Tc). With a low on-resistance (Rds On) of 300mOhm at 13.5A and 10V Vgs, it offers efficient power handling. The gate charge (Qg) is specified at 400 nC at 10V, and input capacitance (Ciss) is a maximum of 9740 pF at 25V. This component is housed in a SOT-227B (miniBLOC) package, suitable for chassis mounting. The IXYS IXFN27N80 is utilized in power supply units, motor control, and industrial automation. It operates across a temperature range of -55°C to 150°C (TJ) with a maximum gate-source voltage of ±20V.
Additional Information
Series: HiPerFET™RoHS Status: ROHS3 CompliantManufacturer Lead Time: 98 week(s)Product Status: Not For New DesignsPackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | SOT-227-4, miniBLOC |
| Mounting Type | Chassis Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 27A (Tc) |
| Rds On (Max) @ Id, Vgs | 300mOhm @ 13.5A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 520W (Tc) |
| Vgs(th) (Max) @ Id | 4.5V @ 8mA |
| Supplier Device Package | SOT-227B |
| Drive Voltage (Max Rds On, Min Rds On) | 10V, 15V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 800 V |
| Gate Charge (Qg) (Max) @ Vgs | 400 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 9740 pF @ 25 V |
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