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IXFN27N80

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IXFN27N80

MOSFET N-CH 800V 27A SOT-227B

Manufacturer: IXYS

Categories: Single FETs, MOSFETs

Quality Control: Learn More

The IXYS IXFN27N80 is an N-Channel HiPerFET™ Power MOSFET designed for high-voltage applications. This device features a Drain to Source Voltage (Vdss) of 800V and a continuous drain current (Id) of 27A at 25°C (Tc), with a maximum power dissipation of 520W (Tc). With a low on-resistance (Rds On) of 300mOhm at 13.5A and 10V Vgs, it offers efficient power handling. The gate charge (Qg) is specified at 400 nC at 10V, and input capacitance (Ciss) is a maximum of 9740 pF at 25V. This component is housed in a SOT-227B (miniBLOC) package, suitable for chassis mounting. The IXYS IXFN27N80 is utilized in power supply units, motor control, and industrial automation. It operates across a temperature range of -55°C to 150°C (TJ) with a maximum gate-source voltage of ±20V.

Additional Information

Series: HiPerFET™RoHS Status: ROHS3 CompliantManufacturer Lead Time: 98 week(s)Product Status: Not For New DesignsPackaging: TubeDatasheet:
Technical Details:
PackagingTube
Package / CaseSOT-227-4, miniBLOC
Mounting TypeChassis Mount
Operating Temperature-55°C ~ 150°C (TJ)
TechnologyMOSFET (Metal Oxide)
FET TypeN-Channel
Current - Continuous Drain (Id) @ 25°C27A (Tc)
Rds On (Max) @ Id, Vgs300mOhm @ 13.5A, 10V
FET Feature-
Power Dissipation (Max)520W (Tc)
Vgs(th) (Max) @ Id4.5V @ 8mA
Supplier Device PackageSOT-227B
Drive Voltage (Max Rds On, Min Rds On)10V, 15V
Vgs (Max)±20V
Drain to Source Voltage (Vdss)800 V
Gate Charge (Qg) (Max) @ Vgs400 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds9740 pF @ 25 V

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