IXFN26N90
MOSFET N-CH 900V 26A SOT-227BManufacturer: IXYS
Categories: Single FETs, MOSFETs
Quality Control: Learn More
The IXYS IXFN26N90 is a HiPerFET™ N-Channel Power MOSFET designed for high-voltage applications. This component features a 900 V drain-source voltage (Vdss) and a continuous drain current of 26 A at 25°C (Tc), with a maximum power dissipation of 600 W (Tc). The device utilizes MOSFET technology and is housed in a SOT-227B (miniBLOC) package, suitable for chassis mounting. Key electrical parameters include a maximum Rds On of 300 mOhm at 13 A and 10 V, a gate charge (Qg) of 240 nC at 10 V, and an input capacitance (Ciss) of 10800 pF at 25 V. The IXYS IXFN26N90 operates across a temperature range of -55°C to 150°C (TJ) and has a maximum gate-source voltage of ±20V. It finds application in industries such as power supplies, motor control, and industrial automation.
Additional Information
Series: HiPerFET™RoHS Status: ROHS3 CompliantManufacturer Lead Time: 57 week(s)Product Status: Not For New DesignsPackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | SOT-227-4, miniBLOC |
| Mounting Type | Chassis Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 26A (Tc) |
| Rds On (Max) @ Id, Vgs | 300mOhm @ 13A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 600W (Tc) |
| Vgs(th) (Max) @ Id | 5V @ 8mA |
| Supplier Device Package | SOT-227B |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 900 V |
| Gate Charge (Qg) (Max) @ Vgs | 240 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 10800 pF @ 25 V |
Request a Quote
Clients Also Buy
FMM75-01F
MOSFET 2N-CH 100V 75A I4-PAC
IXFX64N60Q3
MOSFET N-CH 600V 64A PLUS247-3
VMO650-01F
MOSFET N-CH 100V 690A Y3-DCB
